MP6M12TCR

FET, MOSFET Arrays Overview

The MP6M12TCR is a dual complementary MOSFET module manufactured by ROHM Semiconductor, integrating an N-channel and a P-channel silicon MOSFET within a single MPT6 surface-mount package. The device supports low-voltage switching applications with a drain-source breakdown voltage of ±30V for both channels. It features low on-resistance characteristics optimized for 4V drive signals, achieving typical RDS(on) values of 45mΩ at VGS=4.0V for the N-channel and 84mΩ at VGS=-4.0V for the P-channel. The unit includes built-in gate-source protection diodes and body diodes, facilitating efficient circuit design in compact form factors.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel silicon MOSFETs into a single compact surface-mount package.
• Features low static drain-source on-state resistance to minimize conduction losses during operation.
• Includes built-in gate-source protection diodes to enhance component reliability against electrostatic discharge events.

FET, MOSFET Arrays Applications

• General-purpose electronic switching circuits
• Low-voltage power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TCR corresponds to the tape and reel packaging configuration containing 1000 pieces per basic unit. Confirm that the MPT6 package dimensions align with the target PCB footprint requirements before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a matched N-channel and P-channel pair within a restricted board area. Ensure the driving circuit provides sufficient gate voltage levels to fully exploit the low on-resistance characteristics specified in the electrical data tables.

FET, MOSFET Arrays Part Context

This part belongs to the ROHM MP6M12 series of dual complementary MOSFETs. The standard designation MP6M12 refers to the component itself, while the suffix TCR indicates the specific taping code used for automated surface-mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

No public substitute part numbers are documented in the provided source material.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current rating for the MP6M12?

The absolute maximum continuous drain current (ID) is rated at ±5.0 Amperes for both the N-channel and P-channel transistors at Ta = 25°C.

Does the MP6M12 include internal protection features?

Yes, the datasheet specifies that the device includes built-in Gate-Source (G-S) protection diodes to assist with ESD protection.