MPF4392G

Overview

The MPF4392G is an N-channel depletion-mode JFET switching transistor manufactured by onsemi. It operates within a drain-source voltage range of 30 Vdc and supports a total device dissipation of 350 mW at 25°C, derating by 2.8 mW/°C above this temperature. The zero-gate-voltage drain current (IDSS) ranges from 25 mA to 75 mA. The gate-source cutoff voltage spans -2.0 Vdc to -5.0 Vdc. The component utilizes a TO-92 package with three leads.

Feature Summary

• Designed for low noise applications with fast switching capabilities
• Features extremely low gate leakage currents typically less than 1 nA
• Suitable for analog switch, chopper, and commutator circuit designs

Applications

• Low on-resistance analog switches
• Chopper circuits
• Commutator designs

Procurement Notes

Verify the specific ordering suffix 'G' indicates Pb-Free packaging status as defined in the manufacturer's documentation. Confirm that the TO-92 bulk packaging configuration meets the assembly requirements. Ensure the selected variant aligns with the required electrical characteristics for the intended application environment.

Selection Notes

Select the MPF4392G when an N-channel depletion-mode JFET with high IDSS is required. Compare against the MPF4393 if lower IDSS or different cutoff voltage thresholds are necessary. Evaluate thermal management needs based on the 350 mW dissipation limit and ambient operating conditions.

Part Context

This component belongs to the MPF439x series of N-channel JFETs. It shares design similarities with the MPF4393 but differs in key electrical parameters such as drain current and cutoff voltage. The series targets precision switching applications requiring low noise and fast response times.

Replacement Considerations

Public confirmed substitute part numbers include MPF4393 for alternative current specifications. Other variants within the same family may offer different packaging options such as tape and reel or ammo box configurations.