MPF4393RLRP

Description：N-CHANNEL JFET TRANSISTOR, 30 V
Series：-

SKU:e7f7c68ffd31 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL JFET TRANSISTOR, 30 V
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：30 V
Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：500 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：10pF @ 15V
Resistance - RDS(On)：100 Ohms
Power - Max：350 mW
Operating Temperature：-65°C ~ 150°C
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

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MPF4393RLRP

Overview

The MPF4393RLRP is a depletion-mode N-channel JFET switching transistor manufactured by onsemi. It operates with a maximum drain-source voltage of 30 Vdc and a total device dissipation of 350 mW at 25°C. The component features a zero-gate-voltage drain current (IDSS) ranging from 5.0 to 30 mA, with a typical forward transfer admittance of 12 mmhos. It supports an operating channel temperature range from -65°C to +150°C and utilizes a TO-92 package.

Feature Summary

Depletion-mode N-channel JFET architecture designed for switching applications
Integrated low input capacitance suitable for high-speed signal routing
Robust thermal performance supporting operation up to 150°C junction temperature

Applications

Analog signal switching circuits
High-frequency RF signal routing
Electronic load bank control systems

Procurement Notes

Verify the specific ordering suffix RLRP corresponds to the Ammo Box shipping configuration containing 1000 units per reel. Confirm that the part number includes the G suffix if lead-free packaging compliance is required for the assembly process. Ensure the TO-92 case style matches the mechanical constraints of the target printed circuit board layout.

Selection Notes

Select this component when a normally-on switching behavior is required without external gate biasing. The MPF4393 variant provides higher IDSS compared to the MPF4392, making it suitable for lower impedance loads. Evaluate the static drain-source on-resistance against the specific voltage drop requirements of the application circuit under zero-gate conditions.

Part Context

This device belongs to the MPF439x family of JFET switching transistors produced by onsemi. The family includes the MPF4392 and MPF4393 variants, which share identical pinouts and maximum ratings but differ in their electrical characteristics, specifically regarding drain current and transconductance levels.