MPQ1918GQE-AEC1-Z

MPQ1918GQE-AEC1-Z

$1.20
  • Description:IC GATE DRVR HALF-BRIDGE 14VFQFN
  • Series:-
  • Mfr:Monolithic Power Systems Inc.
  • Package:Tape & Reel (TR)

SKU:150075cb02de Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 14VFQFN
  • Series:-
  • Mfr:Monolithic Power Systems Inc.
  • Package:Tape & Reel (TR)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH:1.6V, 1.7V
  • Current - Peak Output (Source, Sink):1.6A, 5A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):5ns, 3ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:14-PowerVFQFN
  • Supplier Device Package:14-FCQFN (3x3)
  • Grade:Automotive
  • Qualification:AEC-Q100
  • High Side Voltage - Max (Bootstrap):100 V

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MPQ1918GQE-AEC1-Z

Overview

The MPQ1918GQE-AEC1-Z is a high-frequency half-bridge gate driver designed for enhancing-type GaN FETs and low threshold voltage N-channel MOSFETs. It operates with a floating high-side bias up to 100V DC and accepts independent TTL logic inputs. The device features a VCC range of 3.7V to 5.5V, delivering 5A output current. Key timing parameters include a typical propagation delay matching of 1.5ns, maximum delays of 30ns, rise time of 5ns, and fall time of 3ns. It utilizes an internal bootstrap supply with voltage clamping to protect GaN devices.

Feature Summary

  • Independent HS and LS PWM inputs for precise control
  • Internal bootstrap power supply with voltage clamping protection
  • Optimized for high-frequency operation up to several megahertz
  • Adjustable turn-on and turn-off capabilities via external impedance

Applications

  • Driving enhancement-mode GaN FETs in half-bridge configurations
  • Synchronous rectification applications using low Vth MOSFETs
  • Automotive power electronics requiring AEC-Q100 Grade 1 compliance

Procurement Notes

Verify the specific suffix 'Z' indicates tape and reel packaging configuration as per manufacturer standards. Confirm that the AEC1 designation ensures compliance with automotive reliability requirements. Cross-reference the FCQFN-14 package dimensions against your PCB footprint library to ensure mechanical compatibility before finalizing component selection.

Selection Notes

Select this driver when designing circuits with GaN transistors or low-threshold MOSFETs requiring fast switching speeds. Ensure the input signal logic levels match the specified TTL thresholds. Verify that the external bootstrap capacitor and diode selection support the intended operating frequency and duty cycle without causing voltage overshoot beyond the GaN FET's maximum rating.

Part Context

This component belongs to the MPQ1918 series of gate drivers from Monolithic Power Systems. It is part of the automotive-grade product line, distinguished by the AEC1 suffix indicating AEC-Q100 qualification. The series focuses on EMI optimization and high-speed performance for modern wide-bandgap semiconductor applications.

Replacement Considerations

MPQ1918GQE-AEC1-P is a verified alternative within the same family offering identical electrical specifications but potentially differing in packaging format.

MPQ1918GQE-AEC1-ZMPQ1918GQE-AEC1-Z
$1.20
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