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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 28VFQFN
- Series:-
- Mfr:Monolithic Power Systems Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:5V ~ 60V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):800mA, 1A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:28-VFQFN Exposed Pad
- Supplier Device Package:28-QFN (4x5)
- Grade:Automotive
- Qualification:AEC-Q100
- High Side Voltage - Max (Bootstrap):-
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Overview
The MPQ6528GVE-AEC1-Z is a full-bridge gate driver IC designed for automotive applications, qualified under AEC-Q100 standards. It operates within a supply voltage range of 5 V to 60 V and supports synchronous N-channel MOSFET configurations. The device features two independent drivers with peak output currents of 800 mA source and 1 A sink. It utilizes a 28-VFQFN package (4x5 mm) with an exposed pad for thermal management. The operational junction temperature range spans from -40°C to +150°C, ensuring reliability in harsh environments.
Feature Summary
- Integrated charge pump provides self-powered high-side gate drive capability, maintaining sufficient voltage even at 100% duty cycle operation.
- Adjustable dead-time control mechanism prevents shoot-through conditions between upper and lower bridge MOSFETs.
- Includes comprehensive protection features such as over-temperature shutdown and under-voltage lockout for system safety.
Applications
- Brushed DC motor control systems
- Automotive ignition circuits
- Motion control actuators
Procurement Notes
Verify the specific suffix 'Z' indicates RoHS compliance and halogen-free status according to manufacturer declarations. Confirm the 'AEC1' designation aligns with required automotive qualification grades. Ensure the 28-VFQFN footprint matches the PCB layout specifications. Check for moisture sensitivity level requirements during storage and handling procedures.
Selection Notes
Select this component when driving two half-bridges with N-channel MOSFETs in automotive environments requiring wide input voltage tolerance. Consider the 28-pin QFN package for compact designs needing efficient heat dissipation. Evaluate the adjustable dead-time feature if precise switching timing control is necessary to minimize cross-conduction losses.
Part Context
This part belongs to the MPQ6528 series of gate drivers from Monolithic Power Systems. It is specifically engineered for high-reliability automotive power management applications. The device integrates essential protection logic and drive capabilities into a single compact solution, simplifying the design of robust motor and ignition driver stages.
Replacement Considerations
MPQ6528GVE-AEC1-P is listed as a direct substitute by the manufacturer.
FAQ
How does the device handle high-side MOSFET gating at 100% duty cycle?
It uses an integrated charge pump and internal trickle current charging circuit to maintain adequate gate drive voltage for the high-side FET without external bootstrap capacitors.
What protection mechanisms are included in the MPQ6528GVE-AEC1-Z?
The IC includes over-temperature protection and under-voltage lockout (UVLO) to safeguard against abnormal operating conditions.
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