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Product Detailed Parameters
- Description：JFET P-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 5 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：750 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：10pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：300 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500/295
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Overview
The MQ2N2608UB/TR is a P-Channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is designed for surface-mount applications, featuring a 3-SMD, No Lead package configuration. The device operates with a maximum drain-source voltage of 30 V and supports a maximum power dissipation of 300 mW. This component functions as a general-purpose small signal transistor suitable for amplification and switching tasks in electronic circuits.
Feature Summary
- Surface-mount construction utilizing a compact 3-SMD, No Lead package design
- P-Channel JFET technology optimized for small signal processing
- Capable of handling up to 30 V drain-source voltage
Applications
- General purpose small signal amplification
- Electronic circuit switching applications
- Low noise signal processing stages
Procurement Notes
Verify the specific manufacturer marking code and lot date codes upon receipt to ensure authenticity from Microchip Technology. Confirm that the received components match the 3-SMD, No Lead physical dimensions and pinout configuration specified in the official datasheet. Inspect leads for damage or oxidation prior to soldering to maintain signal integrity and thermal performance.
Selection Notes
Select this component when a surface-mount P-Channel JFET is required for low-voltage signal applications. Ensure the design accommodates the 30 V voltage limit and 300 mW power dissipation constraints. Consider the thermal resistance characteristics of the UB package for heat management in dense PCB layouts compared to through-hole alternatives.
Part Context
This part belongs to the Microchip Technology JFET product line, specifically engineered for modern surface-mount assembly processes. It serves as a solid-state alternative to traditional through-hole transistors, offering reduced footprint while maintaining reliable small-signal performance characteristics for consumer and industrial electronics.
Replacement Considerations
Cross-reference with other P-Channel JFETs in the 3-SMD No Lead package format. Verify that substitute parts meet or exceed the 30 V rating and 300 mW power dissipation specifications. Check for identical pinout configurations to ensure direct board compatibility without redesign.
