MR0A08BYS35

Memory IC Overview

The MR0A08BYS35 is a magnetoresistive random access memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 1 Mbit, organized as 128K x 8 bits with an 8-bit data bus width. The component utilizes a parallel interface and has a typical access time of 35 ns. It operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a 44-TSOP (0.400 inch, 10.16 mm wide) package and supports surface mount installation.

Memory IC Feature Summary

• Non-volatile magnetic storage technology retaining data without power
• Parallel I/O interface for direct system connectivity
• High-speed asynchronous read access capabilities

Memory IC Applications

• Industrial control systems requiring persistent memory
• Automotive electronics applications
• Data logging and configuration storage

Memory IC Procurement Notes

Verify the specific suffix against official Everspin documentation to confirm package type and temperature grade. Ensure compatibility with 3.3V logic levels and parallel interface requirements. Confirm RoHS compliance status through the manufacturer's current datasheet before procurement.

Memory IC Selection Notes

Select this component when non-volatile RAM characteristics are required with parallel interface simplicity. Consider the 128K x 8 organization and 35ns access speed for system timing constraints. Evaluate the TSOP package dimensions for PCB layout compatibility.

Memory IC Part Context

Everspin Technologies specializes in STT-MRAM solutions derived from Freescale Semiconductor heritage. This part belongs to the MR0 series, designed for high-reliability embedded memory applications. The technology combines the endurance of flash with the speed of SRAM.

Memory IC Replacement Considerations

Check for suffix variations such as MR0A08BCYS35 or MR0A08BMA35 which may differ in package or temperature range. Verify pinout compatibility before substituting with other MRAM devices.