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MR0A16AMYS35 is listed in the Memory IC range at ChipApex. The manufacturer field lists Everspin Technologies Inc.. Its product description is IC RAM 1MBIT PARALLEL 44TSOP2. Review the specifications below when checking this part for your BOM.
The MR0A16AMYS35 is a magnetoresistive random-access memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 1 Mbit organized as 64K x 16 bits with a 16-bit data bus width. The component utilizes a parallel interface and offers an access time of 35 ns. It operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a TSOP-II-44 package designed for surface mount technology (SMD/SMT). It supports an operating temperature range from 0°C to +70°C and has a power dissipation rating of 600 mW.
Verify the specific suffix 'M' against official Everspin documentation to confirm environmental or reliability specifications, as suffixes often denote temperature grades or packaging variations. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly. Ensure the parallel interface signals match the target system design constraints.
Select this component when designing systems that require non-volatile memory with infinite endurance and SRAM-compatible speeds. The 16-bit data bus and 35 ns access time suit applications demanding rapid data throughput. Consider the 0°C to +70°C operating range for commercial environments. Evaluate the TSOP-II-44 footprint against available PCB space.
This part belongs to the MR0A16A series of parallel MRAM devices from Everspin Technologies. The series focuses on replacing volatile SRAMs with non-volatile alternatives while maintaining similar performance characteristics. The 1 Mbit density provides a balance between capacity and pin count for compact embedded solutions.
Direct replacements may include other parts within the MR0A16A family with different suffixes indicating varied temperature ranges or packaging options. Verify pin compatibility and electrical parameters before substituting.
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