MR0A16AVYS35

Memory IC Overview

The MR0A16AVYS35 is a 64K x 16-bit Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It operates with a supply voltage range of 3 V to 3.6 V and features an asynchronous parallel interface with a maximum access time of 35 ns. The component is housed in a TSOP-II-44 package and supports surface mount installation. It is designed for industrial temperature ranges, typically operating between -40°C and +85°C, ensuring reliable performance in demanding electronic environments.

Memory IC Feature Summary

• Non-volatile data retention capability inherent to magnetoresistive technology
• Asynchronous parallel interface supporting standard memory control signals
• Industrial-grade thermal stability for extended operational reliability

Memory IC Applications

• Embedded systems requiring persistent storage without battery backup
• Industrial control units needing high-cycle endurance memory
• Automotive electronics operating within strict temperature constraints

Memory IC Procurement Notes

Verify the specific suffix designation against official datasheets to confirm temperature grade and package variant. Ensure compatibility with system voltage levels within the 3 V to 3.6 V range. Confirm moisture sensitivity handling requirements during assembly. Validate pinout alignment with existing PCB layouts before procurement.

Memory IC Selection Notes

Select this component when non-volatility and high write endurance are critical compared to traditional SRAM or Flash. Consider the 35 ns access speed for synchronous-like performance without clock dependencies. Evaluate the TSOP-II-44 footprint against available board space. Compare power consumption metrics against alternative MRAM families if low-power operation is a primary constraint.

Memory IC Part Context

This part belongs to the MR0A16A series of 1-Mbit MRAM devices. It shares architectural similarities with other Everspin MRAM products but differs in organization and packaging. The series utilizes spin-transfer torque magnetic tunnel junctions for data storage, offering infinite read/write cycles unlike charge-based memories.

Memory IC Replacement Considerations

Direct replacements include MR0A16AVYS35R for reel-packaged variants. Cross-family substitutes like MR2A16A offer higher density but may require interface adjustments. Verify pin compatibility and electrical specifications before substituting with generic SRAM or Flash components.