MR0A16AYS35R

Memory IC Overview

The MR0A16AYS35R is a 1 Mbit Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It features a parallel interface with a data bus width of 16 bits and an organization of 64K x 16. The component operates within a supply voltage range of 3 V to 3.6 V, ensuring compatibility with standard 3.3V logic systems. Key performance metrics include a maximum access time of 35 ns and power dissipation of 600 mW. It is housed in a TSOP-II-44 surface-mount package and supports an industrial operating temperature range from 0°C to +70°C.

Memory IC Feature Summary

• Non-volatile memory architecture retains data without continuous power supply.
• Parallel I/O interface enables direct connection to microprocessors and controllers.
• High endurance characteristics suitable for frequent write operations.

Memory IC Applications

• Industrial control systems requiring reliable non-volatile storage
• Automotive electronics demanding high durability and temperature stability
• Consumer devices needing fast boot-up times and persistent configuration data

Memory IC Procurement Notes

Verify the specific suffix 'S' indicates the commercial temperature grade and '35' denotes the 35ns speed variant. Confirm RoHS compliance status through official documentation before integration. Ensure PCB layout accounts for the TSOP-II-44 footprint dimensions and thermal requirements specified in the datasheet to maintain operational integrity within the defined temperature range.

Memory IC Selection Notes

Select this part when a 1 Mbit capacity with 16-bit parallel access is required. Compare against MR1A16AYS35R if higher density is needed, or MR2A08AYS35R for different organization structures. Consider the TSOP-II-44 package constraints and ensure the design supports the specified 3V to 3.6V operating voltage range for optimal performance.

Memory IC Part Context

This component belongs to the MR0A16A series of parallel MRAM devices. It shares the TSOP-II-44 package and 35ns access time with other variants in the family but differs in storage organization and capacity. The series is designed for applications requiring high-speed, non-volatile memory with unlimited write endurance.

Memory IC Replacement Considerations

Direct substitutes within the same package and pinout include other MRAM parts from the manufacturer's parallel I/O lineup. Verify electrical compatibility and pin assignments before substitution.