MR0DL08BMA45R

Memory IC Overview

The MR0DL08BMA45R is a 1Mbit magnetoresistive random access memory (MRAM) device from Everspin Technologies. It features a parallel x8 interface and operates within a voltage range of 3.0V to 3.6V for VDD and 1.65V to 3.6V for VDDQ. The device offers a read/write speed of 45ns with unlimited endurance. It is housed in a BGA-48 package, suitable for surface mount applications, and supports industrial temperature ranges.

Memory IC Feature Summary

• Provides non-volatile data storage with unlimited write endurance.
• Features dual power supply architecture supporting separate VDD and VDDQ voltages.
• Delivers fast parallel interface access with 45ns read/write timing.

Memory IC Applications

• Embedded systems requiring persistent memory
• Industrial control applications
• Automotive electronics

Memory IC Procurement Notes

Verify the specific suffix 'R' indicates reel packaging when ordering. Confirm voltage compatibility for both VDD and VDDQ lines during integration. Ensure the BGA-48 footprint matches the target PCB design. Check for RoHS compliance documentation prior to procurement.

Memory IC Selection Notes

Select this component for designs needing SRAM-like speed without volatility. The dual voltage support allows flexibility in system power rails. Consider the BGA-48 package constraints for board layout. Compare against MR0D08B if single voltage operation suffices.

Memory IC Part Context

This part belongs to the MR0 series of MRAM devices. It complements larger capacity parts like the MR4A series by offering lower density options. The technology relies on magnetic tunnel junctions for data retention.

Memory IC Replacement Considerations

The MR0D08B is a related variant with similar specifications but may differ in packaging or voltage configuration. Verify pinout compatibility before substitution.