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MR1A16AMA35R is listed in the Memory IC range at ChipApex. The manufacturer field lists Everspin Technologies Inc.. Its product description is IC RAM 2MBIT PARALLEL 48FBGA. Review the specifications below when checking this part for your BOM.
The MR1A16AMA35R is a magnetoresistive random access memory (MRAM) device manufactured by Everspin Technologies. It features a parallel interface with a storage capacity of 2 Mbit, organized as 128 k x 16 bits and a 16-bit data bus width. The component operates within a supply voltage range of 3 V to 3.6 V and has an access time of 35 ns. It is housed in a BGA-48 package for surface mount installation. The device supports an operating temperature range from -40°C to +105°C, with power dissipation rated at 600 mW.
Verify the specific suffix 'MA' against official datasheets to confirm the exact temperature grade and package variant, as suffixes define critical environmental and physical specifications. Ensure design compatibility with the BGA-48 footprint and 3.3V logic levels before ordering. Confirm lead times directly with the manufacturer or authorized distributors due to potential supply chain variability.
Select this part when designing systems that require non-volatile memory with infinite endurance and SRAM-like speed. The 128k x 16 organization suits applications needing moderate density with wide data paths. Consider the -40°C to +105°C industrial temperature range for robustness. Verify that the parallel interface fits the target microcontroller's available pins and timing constraints.
This component belongs to the MR1A16A series of parallel MRAM devices from Everspin Technologies. The series offers spin-transfer torque MRAM solutions designed to replace traditional volatile RAM and non-volatile flash in various embedded applications. The MR1A16A family provides a balance of performance, density, and durability for industrial and automotive markets.
The MR1A16AMA35R utilizes magnetoresistive random access memory technology, which provides unlimited write endurance, unlike flash memory which has limited cycle counts.
Yes, as a non-volatile MRAM device, it retains stored data without power, combining the persistence of flash with the speed of SRAM.
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