MR1A16AVYS35

Memory IC Overview

The MR1A16AVYS35 is a magnetoresistive random-access memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 2 Mbit organized as 128 k x 16 with a 16-bit data bus width. The component utilizes a parallel interface and offers an access time of 35 ns. It operates within a voltage range of 3 V to 3.6 V, with power dissipation rated at 600 mW. The device supports surface mount installation in a TSOP-II-44 package and functions reliably across an industrial temperature range from -40°C to +105°C.

Memory IC Feature Summary

• Provides non-volatile data retention without requiring write delays or refresh cycles typical of other memory technologies.
• Delivers SRAM-compatible read/write timing for high-speed data retrieval and storage operations.
• Ensures unlimited endurance capabilities, eliminating wear-out concerns associated with traditional flash memory.

Memory IC Applications

• Industrial control systems requiring persistent parameter storage
• Automotive electronics demanding high reliability and wide temperature tolerance
• Smart devices needing frequent data logging and rapid access

Memory IC Procurement Notes

Verify the specific suffix codes against official datasheets to confirm package type and temperature grade. Ensure compatibility with system voltage levels between 3 V and 3.6 V. Confirm lead times due to reported long delivery periods. Validate RoHS compliance status before integration into final assemblies.

Memory IC Selection Notes

Select this model when SRAM-like speed is required alongside non-volatility and infinite endurance. The TSOP-II-44 package suits space-constrained designs needing parallel I/O. Consider the -40°C to +105°C range for harsh environments. Compare against serial alternatives if pin count reduction is critical.

Memory IC Part Context

This part belongs to the MR1A16A series of parallel MRAM devices. It complements Everspin's portfolio by offering high-density storage with fast access times. The technology leverages spin-transfer torque magnetic tunnel junctions for reliable data storage across diverse applications.

Memory IC Replacement Considerations

Direct substitutes include MR1A16ACYS35R and MR1A16AYS35R, which share identical electrical specifications but differ in operating temperature ranges and packaging formats. Verify pinout compatibility before substitution.