MR1A16AVYS35R

Memory IC Overview

The MR1A16AVYS35R is a magnetoresistive random access memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 2 Mbit organized as 128 k x 16 with a 16-bit data bus width. The component utilizes a parallel interface and offers an access time of 35 ns. It operates within a voltage range of 3 V to 3.6 V, with power dissipation rated at 600 mW. The device supports surface mount installation in a TSOP-II-44 package and functions reliably across a temperature range of -40°C to +125°C.

Memory IC Feature Summary

• Provides non-volatile data retention without requiring write delays or refresh cycles.
• Delivers SRAM-compatible read/write timing for high-speed embedded applications.
• Supports unlimited endurance through magnetic tunnel junction technology.

Memory IC Applications

• Industrial control systems requiring persistent parameter storage
• Automotive electronics demanding extended temperature operation
• Smart devices needing reliable real-time data caching

Memory IC Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm the exact operating temperature range and package variant. Ensure compatibility with system voltage levels between 3 V and 3.6 V. Confirm that the parallel interface requirements align with the host controller's I/O capabilities before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when designing systems that require infinite write endurance and non-volatility without complex wear-leveling algorithms. It serves as a direct replacement for volatile SRAM in applications where data persistence is critical upon power loss. Consider the TSOP-II-44 footprint constraints and thermal management needs for the specified 600 mW power dissipation rating during layout.

Memory IC Part Context

This part belongs to the MR1A16A series of parallel MRAM devices from Everspin Technologies. The series is engineered to bridge the performance gap between volatile SRAM and traditional non-volatile memories like Flash. It emphasizes high-speed access times combined with robust data retention characteristics suitable for harsh environments.

Memory IC Replacement Considerations

Direct pin-to-pin replacements within the same family include variants such as MR1A16ACYS35R or MR1A16AMYS35R, depending on whether commercial or industrial temperature grades are required. Verify that substitute parts maintain the identical 35 ns access time and 16-bit organization to ensure circuit compatibility.