MR20H40CDFR

Memory IC Overview

The MR20H40CDFR is a 4 Mbit Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It features a storage organization of 512K x 8 bits and utilizes a Serial Peripheral Interface (SPI) for communication. The component operates within a supply voltage range of 3 V to 3.6 V, with a maximum clock frequency of 50 MHz and an access time of 20 ns. Power consumption specifications indicate operating currents of 13.8 mA and 33 mA under different conditions. The device is housed in an 8-DFN surface-mount package and is rated for an industrial operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Non-volatile magnetic storage technology providing instantaneous random address writes without page programming or erase cycles.
• High endurance supporting unlimited read/write operations, eliminating wear-out issues associated with traditional flash memory.
• Long-term data retention capability ensuring reliable data preservation for over 20 years within the specified industrial temperature range.

Memory IC Applications

• Industrial control systems requiring frequent data logging
• Smart metering applications demanding high durability
• Data recorders needing non-volatile storage with low write latency

Memory IC Procurement Notes

Verify the specific suffix 'CDFR' corresponds to the DFN-8 package and Reel tape-and-reel packaging configuration. Confirm that the 50 MHz SPI clock speed and 20 ns access time meet system timing requirements. Ensure the 3 V to 3.6 V supply voltage aligns with the target board's power rails. Check for RoHS compliance documentation and lead times due to reported long delivery periods.

Memory IC Selection Notes

Select this component when replacing EEPROM or Flash in applications requiring infinite endurance and zero-write-latency. Compare against the MR25H40 series if lower voltage operation (2.7 V) is required, noting potential interface differences. Ensure the 8-DFN footprint matches the PCB design. Consider the NETSOL S3A4004V0M as a pin-compatible alternative if supply constraints exist, verifying its 108 MHz SDR clock support.

Memory IC Part Context

This part belongs to the Everspin MR20H40 series of serial I/O MRAM devices. It serves as a direct upgrade path for legacy non-volatile memories in embedded systems. The device leverages Spin-Transfer Torque MRAM (STT-MRAM) technology to combine the density of flash with the speed and endurance of SRAM. It is designed for environments where data integrity and write cycle limits are critical constraints.

Memory IC Replacement Considerations

The NETSOL S3A4004V0M is a documented functional substitute offering similar 4 Mbit capacity and SPI compatibility. Verify pinout alignment between the 8-DFN packages before substitution.