MR256A08BYS35

Memory IC Overview

The MR256A08BYS35 is a magnetoresistive random-access memory (MRAM) device manufactured by Everspin Technologies. It offers a storage capacity of 256 kbit, organized as 32k x 8 bits with an 8-bit data bus width. The component utilizes a parallel interface and features a typical access time of 35 ns. It operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a TSOP-II-44 package suitable for surface mount technology. It supports an industrial operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Provides non-volatile data retention exceeding 20 years without power.
• Features unlimited read and write endurance capabilities.
• Maintains SRAM-compatible timing for direct controller integration.

Memory IC Applications

• Industrial control systems requiring high reliability
• Automotive electronics applications
• Data logging and persistent storage

Memory IC Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm package type and temperature grade. Confirm moisture sensitivity level requirements for your assembly process. Ensure compatibility with existing SRAM controllers due to timing similarities. Check for any recent product change notices regarding trace codes or packaging updates before finalizing orders.

Memory IC Selection Notes

Select this part when non-volatility combined with infinite endurance is critical. It serves as a drop-in replacement for volatile SRAM in many designs. Consider the TSOP-II-44 footprint constraints during PCB layout. Verify that the 3.3V logic levels match your system's I/O standards.

Memory IC Part Context

This component belongs to the MR256A08B series of parallel I/O MRAM devices. It represents a class of memory solutions designed to replace traditional flash, EEPROM, and battery-backed SRAM combinations. The technology leverages spin-transfer torque mechanisms for data storage.

Memory IC Replacement Considerations

MR256A08BCYS35