MR25H10CDCR

Memory IC Overview

The MR25H10CDCR is a magnetoresistive random access memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 1 Mbit, organized as 128K x 8 bits. The component utilizes a Serial Peripheral Interface (SPI) for data communication and operates within a supply voltage range of 2.7 V to 3.6 V. It is housed in an 8-pin DFN package with surface mount technology. The device supports an industrial operating temperature range from -40°C to +85°C and has a maximum power dissipation of 600 mW.

Memory IC Feature Summary

• Offers unlimited read/write endurance without write delays, enabling immediate sequential operations.
• Provides automatic data protection during power loss events to prevent data corruption.
• Features block write protection capabilities to safeguard specific memory regions.
• Supports low current sleep mode for enhanced energy efficiency.

Memory IC Applications

• Industrial control systems requiring high durability
• Embedded devices needing non-volatile data retention
• Equipment replacing serial EEPROM or Flash memory

Memory IC Procurement Notes

Verify the manufacturing status before procurement, as this specific part number may be marked as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors, as stock levels can fluctuate. Ensure the ordering suffix matches the required reel packaging format. Check for alternative packages if NRND status limits long-term supply chain stability.

Memory IC Selection Notes

Select this component when designing systems that require infinite write endurance and fast random access speeds. It serves as a direct replacement for serial EEPROM, Flash, and FeRAM technologies. Consider the 8-pin DFN package constraints and SPI interface requirements. Verify compatibility with the system's voltage levels and temperature specifications.

Memory IC Part Context

This device belongs to the MR25H10 series of magnetoresistive random access memories. It is designed to bridge the performance gap between volatile SRAM and traditional non-volatile storage. The technology leverages magnetic tunnel junctions for data storage, offering speed comparable to SRAM with non-volatility similar to Flash.

Memory IC Replacement Considerations

Direct replacements include other variants within the MR25H10 family, such as MR25H10CDF or MR25H10CDC, depending on the required packaging type. Verify pinout compatibility and electrical characteristics when substituting with different package options.