MR25H10MDCR

Memory IC Overview

The MR25H10MDCR is a 1 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features an SPI serial interface with a maximum clock rate of 40 MHz and operates within a supply voltage range of 2.7 V to 3.6 V. The memory organization is 128K x 8 bits, housed in an 8-DFN package with an exposed pad. It supports industrial operating temperatures from -40°C to +85°C and includes block write protection and automatic data protection on power loss.

Memory IC Feature Summary

• Unlimited write endurance with no write delays
• Data retention exceeding 20 years
• Automatic data protection during power loss events
• Block write protection capabilities

Memory IC Applications

• Direct replacement for serial EEPROM, Flash, or FeRAM
• Industrial control systems requiring high endurance
• Automotive applications meeting AEC-Q100 Grade 1 standards

Memory IC Procurement Notes

Verify the specific suffix 'MDCR' against official Everspin documentation to confirm package type and tape-and-reel configuration. Confirm that the component status remains NRND (Not Recommended for New Designs) and assess long-term availability constraints before finalizing procurement plans.

Memory IC Selection Notes

Select this component when non-volatile storage requires infinite write cycles without wear-out mechanisms. Ensure the design accommodates the 8-DFN footprint and SPI timing requirements. Verify thermal dissipation limits within the specified power dissipation rating for the target application environment.

Memory IC Part Context

This part belongs to the MR25H10 series of serial SPI MRAM devices. It shares functional characteristics with other variants in the family but differs in packaging and reel specifications. The series is designed to provide robust, high-speed non-volatile memory solutions for demanding embedded applications.

Memory IC Replacement Considerations

Consult official Everspin substitution guides for verified alternatives. Generic cross-references may not match the specific magnetic tunnel junction technology or pinout configurations required for direct board-level replacement.