MR25H10MDF

Memory IC Overview

The MR25H10MDF is a 1 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features an SPI serial interface with a memory organization of 128K x 8 bits and an 8-bit data bus width. The device operates within a supply voltage range of 2.7 V to 3.6 V, with a typical access time of 25 ns. It is housed in an 8-lead DFN package with a solder pad and supports surface mount installation. The component is rated for an operating temperature range from -40°C to +125°C and complies with RoHS standards.

Memory IC Feature Summary

• Non-volatile magnetic storage technology providing unlimited endurance without wear-out mechanisms.
• Serial Peripheral Interface (SPI) support enabling simplified board layout and reduced pin count.
• High thermal stability suitable for demanding industrial and automotive environments.
• Compact surface-mount packaging designed for space-constrained applications.

Memory IC Applications

• Industrial control systems requiring high reliability and long-term data retention
• Automotive electronics meeting AEC-Q100 qualification standards
• Embedded systems needing fast boot times and high write endurance
• Smart metering devices for secure data logging

Memory IC Procurement Notes

Verify the specific suffix 'MDF' corresponds to the tray packaging configuration as indicated in distributor specifications. Confirm that the design utilizes the recommended 8-pin DFN footprint with the reduced exposed pad size for optimal thermal and mechanical performance. Ensure compatibility with the 2.7V to 3.6V supply rails during system power-up and shutdown sequences to prevent unintended write operations.

Memory IC Selection Notes

Select this component when non-volatility and high write endurance are critical compared to flash-based alternatives. The MR25H10MDF offers faster write speeds than traditional EEPROM or Flash memory. Consider the 128K x 8 organization for applications requiring byte-level access. Verify that the SPI clock frequency requirements align with the device's maximum operational limits under the chosen supply voltage and temperature conditions.

Memory IC Part Context

This part belongs to the MR25H10 series of magnetoresistive RAM devices from Everspin Technologies. The series is characterized by its use of spin-transfer torque magnetic tunnel junctions for data storage. The MR25H10MDF specifically denotes the 1 Mbit density variant packaged in a DFN-8 format. It shares architectural similarities with other members of the MR25Hxx family but differs in capacity and specific packaging options.

Memory IC Replacement Considerations

The MR25H10MDC is listed as a direct substitute offering identical electrical characteristics and functionality. Both parts share the same memory density and interface protocol. When replacing, ensure the alternative package type matches the existing PCB footprint constraints and thermal management requirements of the assembly.