MR25H40MDF

Memory IC Overview

The MR25H40MDF is a magnetoresistive random access memory (MRAM) device manufactured by Everspin Technologies. It offers a storage capacity of 4 Mbit, organized as 512K x 8 bits with an 8-bit data bus width. The component utilizes a Serial Peripheral Interface (SPI) and features a 25 ns access time. It operates within a supply voltage range of 3 V to 3.6 V, with working power currents specified at 13.8 mA and 33 mA. The device supports an extended industrial temperature range from -40°C to +125°C and is housed in an 8-pin DFN package.

Memory IC Feature Summary

• Provides unlimited write endurance without the degradation associated with traditional flash or EEPROM technologies.
• Retains stored data for more than 20 years without requiring power.
• Includes automatic data protection mechanisms that activate during power loss events.
• Functions as a direct replacement for serial EEPROM, Flash, and FeRAM devices.

Memory IC Applications

• Industrial control systems requiring high reliability
• Automotive electronics meeting AEC-Q100 Grade 1 standards
• Smart home infrastructure components

Memory IC Procurement Notes

Verify the specific suffix and package variant against official datasheets before procurement. Confirm humidity sensitivity level and moisture sensitivity classification requirements for your assembly process. Ensure compatibility with the required operating temperature range and SPI interface specifications. Cross-reference manufacturer part numbers to avoid ordering errors due to similar naming conventions.

Memory IC Selection Notes

Select this component when non-volatile memory requires infinite write cycles and fast access times. It is suitable for applications needing robust data retention under harsh environmental conditions. Consider the 8-pin DFN footprint for space-constrained designs. Verify that the SPI interface speed meets system timing requirements.

Memory IC Part Context

This device belongs to the MR25H40 family of magnetoresistive random access memories. It shares architectural similarities with other members like the MR25H256 but offers higher density. The technology leverages magnetic tunnel junctions for data storage, distinguishing it from charge-based memory types.

Memory IC Replacement Considerations

The MR25H40MDF serves as a direct replacement for serial EEPROM, Flash, and FeRAM. Specific substitute part numbers are not publicly confirmed in the provided documentation.