MR25H40MDFR

Memory IC Overview

The MR25H40MDFR is a 4 Mbit magnetoresistive random access memory (MRAM) device organized as 512 k x 8 bits. It features an SPI interface with a 25 ns access time and operates within a 3 V to 3.6 V supply range. The component supports industrial, extended, and AEC-Q100 Grade 1 temperature ranges up to +125°C. It utilizes an 8-pin DFN package and consumes 13.8 mA or 33 mA during operation.

Memory IC Feature Summary

• Provides unlimited write endurance without the degradation associated with flash technology
• Retains data for over 20 years while maintaining low standby power consumption
• Enables direct replacement for serial EEPROM, Flash, and FeRAM in existing designs

Memory IC Applications

• Dynamically reconfigurable FPGA configuration storage
• Industrial control systems requiring high reliability
• Automotive electronics meeting AEC-Q100 standards

Memory IC Procurement Notes

Verify the specific suffix 'MDFR' against the manufacturer's current datasheet to confirm the tape and reel packaging format. Ensure the selected temperature grade matches the operational requirements of the target application environment before finalizing procurement orders.

Memory IC Selection Notes

Select this component when non-volatile memory requires infinite write cycles and fast write speeds. It is suitable for applications needing robust data retention under harsh thermal conditions. Compare power consumption metrics against standard flash alternatives to validate efficiency gains in battery-operated devices.

Memory IC Part Context

This part belongs to the MR25H40 family of serial MRAM devices from Everspin Technologies. It shares architectural similarities with other members like the MR25H40MDF but differs in packaging and delivery format. The series is designed to bridge the performance gap between volatile SRAM and traditional non-volatile memories.

Memory IC Replacement Considerations

Direct substitutes include the MR25H40MDF for tray-packaged equivalents. Verify pin compatibility and voltage levels when replacing legacy EEPROM or Flash components in established circuit designs.