MR2A08AYS35

Memory IC Overview

The MR2A08AYS35R is a Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 4 Mbit organized as 512K x 8 bits with an 8-bit data bus width. The component utilizes a parallel interface and offers a typical access time of 35 ns. It operates within a supply voltage range of 3 V to 3.6 V, consuming 30 mA during read operations and 90 mA during write operations. The device is housed in a TSOP-II-44 package and supports a commercial operating temperature range from 0°C to +70°C.

Memory IC Feature Summary

• Provides non-volatile data retention without requiring periodic refresh cycles or battery backup circuits.
• Enables direct replacement for SRAM designs through compatible pinouts and asynchronous timing interfaces.
• Incorporates internal circuitry to inhibit write operations during power-up or power-down voltage fluctuations.

Memory IC Applications

• Industrial control systems requiring high reliability and fast response times
• Railway transportation equipment needing persistent data logging
• Power protection devices demanding immediate data preservation during outages
• High-end medical equipment requiring robust memory solutions

Memory IC Procurement Notes

Verify the specific suffix 'R' against the required packaging format, as it typically indicates reel packaging. Confirm that the TSOP-II-44 package dimensions align with the target PCB footprint. Ensure the design accommodates the specified current consumption levels of 30 mA for reads and 90 mA for writes. Validate that the 3 V to 3.6 V supply range matches the system power rails. Check RoHS compliance documentation if environmental regulations apply to the final assembly.

Memory IC Selection Notes

Select this component when a design requires non-volatile memory with SRAM-like speed and infinite endurance. It is suitable for applications where frequent writing occurs, eliminating wear-out concerns associated with flash memory. Choose this part over battery-backed SRAM to remove maintenance requirements and reduce board space. Consider the parallel interface requirement, as it differs from serial SPI options. Ensure the 512K x 8 organization meets the specific data storage needs of the application.

Memory IC Part Context

This device belongs to the MR2A08A series of parallel MRAM products from Everspin Technologies. The series is designed to bridge the gap between volatile SRAM and non-volatile flash memory. Other variants in the family may offer different organizations, such as 16-bit widths, or alternative packages. The technology relies on magnetic tunnel junctions rather than charge storage, providing distinct advantages in durability and speed compared to traditional semiconductor memories.

Memory IC Replacement Considerations

Direct pin-compatible replacements within the same series include variations with different suffixes indicating package or temperature grades, provided the electrical parameters remain identical. Verify that any substitute maintains the 35 ns access time and 4 Mbit capacity. Cross-reference with other parallel MRAM models only if the interface timing and voltage specifications are fully compatible.