MR2A16AMA35

Memory IC Overview

The MR2A16AMA35 is a 4 Mbit (256K x 16) parallel interface Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It operates with a 3.3 V power supply and features a fast 35 ns access time, ensuring SRAM-compatible timing for seamless integration into existing systems without controller redesign. The component utilizes Spin-Transfer Torque (STT) technology to provide non-volatile data retention exceeding 20 years while offering unlimited read/write endurance. This architecture eliminates the need for battery-backed solutions or frequent memory replacements associated with Flash or EEPROM technologies.

Memory IC Feature Summary

• Provides unlimited read and write endurance, eliminating wear-out limitations found in traditional non-volatile memories.
• Retains stored data for over 20 years without power, ensuring long-term data integrity.
• Delivers high-speed 35 ns access times compatible with standard SRAM control logic.
• Integrates automatic data protection mechanisms during power loss events.

Memory IC Applications

• Industrial control systems requiring persistent parameter storage
• Automotive electronics demanding high reliability and temperature stability
• Smart devices needing rapid data caching and retrieval
• Embedded systems replacing battery-backed SRAM configurations

Memory IC Procurement Notes

Verify the specific suffix 'MA' against official Everspin documentation to confirm package type and temperature range, as variations exist within the MR2A16 series. Ensure compatibility with 3.3 V logic levels and parallel interface requirements. Confirm moisture sensitivity level (MSL-3) handling procedures are followed during assembly. Cross-reference the exact part number with authorized distributors to avoid counterfeit components and ensure RoHS compliance status matches project specifications.

Memory IC Selection Notes

Select this component when designing systems that require both high-speed random access and non-volatile data retention without the complexity of battery maintenance. It serves as a direct drop-in replacement for SRAM in applications where data persistence is critical upon power cycling. Consider the 256K x 16 organization for wide-data bus architectures. Evaluate the industrial temperature range options if operating in extreme environments, ensuring the selected variant meets the specific thermal constraints of the target application.

Memory IC Part Context

This device belongs to the MR2A16A family of asynchronous MRAMs from Everspin Technologies. The family leverages spin-transfer torque magnetoresistive technology to combine the speed of SRAM with the non-volatility of Flash. These chips are designed to simplify system design by consolidating multiple memory types into a single component, reducing board space and improving overall system efficiency and reliability compared to legacy memory solutions.

Memory IC Replacement Considerations

Direct substitutes include other parts within the MR2A16A series with matching pinouts and electrical characteristics. Verify equivalent performance metrics such as access time and voltage tolerance before substitution. Alternative non-volatile memories like FRAM or NVSRAM may offer similar functionality but differ in endurance and interface protocols. Always consult the manufacturer's cross-reference guide for validated replacements.