MR2A16AYS35R

Memory IC Overview

The MR2A16AYS35R is a 4 Mbit magnetoresistive random access memory (MRAM) device organized as 256K x 16 bits. It features a parallel interface with a 16-bit data bus width and a 35 ns access time. The component operates on a 3.3 V power supply, ranging from 3 V to 3.6 V. It utilizes a TSOP-II-44 surface-mount package. The device supports commercial temperature ranges from 0°C to +70°C and meets RoHS compliance standards.

Memory IC Feature Summary

• Provides nonvolatile data retention without requiring periodic refreshing or battery backup.
• Offers unlimited read and write endurance, eliminating wear-out limitations found in flash memory.
• Maintains SRAM-compatible timing for seamless integration into existing system architectures.

Memory IC Applications

• Industrial control systems requiring persistent parameter storage
• Automotive electronics demanding high reliability and durability
• Smart devices needing fast data caching and retrieval

Memory IC Procurement Notes

Verify the specific suffix 'S35R' against official Everspin documentation to confirm the exact temperature grade and packaging configuration. Ensure compatibility with standard 3.3V logic levels and TSOP-II-44 footprint requirements during procurement planning.

Memory IC Selection Notes

Select this component when designing systems that require high-speed, nonvolatile storage with infinite endurance. It serves as a direct replacement for battery-backed SRAM or complex flash management solutions, simplifying board design while ensuring data integrity across commercial operating temperatures.

Memory IC Part Context

This part belongs to the MR2A16A series of asynchronous MRAM devices. It shares architectural similarities with other parallel MRAM offerings but is distinct in its 256K x 16 organization and specific thermal ratings defined by the manufacturer's product line specifications.

Memory IC Replacement Considerations

Consult official substitution guides for equivalent capacity MRAM parts. Verify pinout compatibility and voltage thresholds before replacing legacy SRAM or EEPROM components in existing designs.