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MR4A08BCMA35R is listed in the Memory IC range at ChipApex. The manufacturer field lists Everspin Technologies Inc.. Its product description is IC RAM 16MBIT PARALLEL 48FBGA. Review the specifications below when checking this part for your BOM.
The MR4A08BCMA35R is a 16 Mbit Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It features a parallel interface with an organization of 2 M x 8 and an 8-bit data bus width. The component provides a fast access time of 35 ns, ensuring SRAM-compatible timing performance. It operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a BGA-48 package suitable for surface mount technology. It supports an industrial operating temperature range from -40°C to +85°C.
Verify the specific suffix MA35R against official datasheets to confirm the reel packaging configuration and moisture sensitivity level. Ensure compatibility with the required BGA-48 footprint and soldering profiles during procurement planning. Confirm that the 3.3V logic levels align with the target system design specifications before finalizing orders.
Select this component when designing systems that require non-volatile memory with infinite endurance and SRAM-like speed. The 2M x 8 organization suits applications needing moderate capacity with wide data buses. Consider the BGA-48 package constraints and thermal management requirements for the -40°C to +85°C operating range during PCB layout.
This part belongs to the MR4A08B series of parallel MRAM devices from Everspin Technologies. It shares core architectural features with other variants in the family but differs in packaging and specific electrical parameters. The series is designed to replace traditional volatile memories in applications where data persistence and high cycle life are critical technical requirements.
Direct substitutes include other MR4A08B variants such as MR4A08BCYS35 or MR4A08BYS35, though these utilize TSOP-II packages instead of BGA. Verify pinout compatibility and package dimensions carefully when considering alternative form factors within the same memory density series.
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