MR4A08BCYS35

Memory IC Overview

The MR4A08BCYS35 is a 16 Mbit Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It features a parallel interface with an organization of 2M x 8 and an 8-bit data bus width. The component offers a 35 ns access time and operates within a supply voltage range of 3 V to 3.6 V. It is housed in a 44-TSOP-II package and supports surface mount installation. The device functions reliably across an industrial temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Provides non-volatile memory storage utilizing magnetoresistive RAM technology for data retention without power.
• Delivers SRAM-compatible read/write timing through a parallel interface architecture.
• Supports unlimited write endurance characteristics inherent to the underlying MRAM cell structure.

Memory IC Applications

• Industrial control systems requiring high endurance and non-volatile data logging
• Embedded applications needing fast random access memory replacement
• Automotive electronics operating within extended temperature ranges

Memory IC Procurement Notes

Verify the specific suffix 'C' indicates the commercial temperature grade (-40°C to +85°C) and 'YS' denotes the TSOP-II package style against the official datasheet. Confirm RoHS compliance status and moisture sensitivity level prior to ordering. Ensure the parallel I/O configuration matches the target system's bus requirements. Check for any recent product change notices affecting material composition or pinout definitions.

Memory IC Selection Notes

Select this part when a 16 Mbit capacity with 2M x 8 organization is required. Choose the TSOP-II-44 package for surface mount compatibility. Ensure the design accommodates the 3 V to 3.6 V supply voltage constraints. Verify that the 35 ns access speed meets the system performance needs. Consider the industrial temperature range suitability for the intended operational environment.

Memory IC Part Context

This component belongs to the MR4A08B series of parallel MRAM devices from Everspin Technologies. It serves as a non-volatile alternative to traditional SRAM, offering immediate data availability upon power-up. The series is designed for applications demanding high reliability and extensive write cycles. The specific model integrates the memory core with parallel interface logic in a standard small outline package.

Memory IC Replacement Considerations

Direct substitutes include other variants within the MR4A08B family, such as MR4A08BCYS35R, which shares identical electrical specifications but differs in packaging format. Cross-referencing with MR4A08BMA35 is possible if BGA packaging is acceptable. Verify pin-to-pin compatibility and voltage levels before substituting.