MR4A08BYS35R

Memory IC Overview

The MR4A08BYS35R is a magnetoresistive random access memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 16 Mbit organized as 2M x 8 with an 8-bit data bus width. The component utilizes a parallel interface and offers an access time of 35 ns. It operates within a supply voltage range of 3 V to 3.6 V, with working power currents specified at 60 mA and 152 mA. The device is housed in a TSOP-II-44 package and supports surface mount installation.

Memory IC Feature Summary

• Non-volatile magnetic memory technology providing persistent data retention without power.
• Parallel I/O interface supporting high-speed data transfer operations.
• Surface-mountable package design suitable for automated assembly processes.

Memory IC Applications

• Embedded systems requiring non-volatile data storage
• Industrial control applications needing reliable memory
• Automotive electronics demanding robust performance

Memory IC Procurement Notes

Verify the specific suffix 'R' indicates reel packaging configuration against official datasheets. Confirm RoHS compliance status and moisture sensitivity level requirements for your manufacturing process. Ensure the 35ns access time meets system timing constraints. Validate the 44-pin TSOP-II footprint dimensions for PCB layout compatibility before finalizing procurement orders.

Memory IC Selection Notes

Select this part when a 16 Mbit parallel MRAM solution is required with 35 ns speed. Compare against MR4A08BMA35R for BGA package alternatives if space constraints differ. Consider MR4A08BCYS35R for extended industrial temperature ranges if operating conditions exceed commercial limits. Verify voltage tolerance matches the 3V to 3.6V specification.

Memory IC Part Context

This component belongs to the MR4A08B series of parallel MRAM devices from Everspin Technologies. It shares core specifications with variants like MR4A08BYS35 but differs in packaging format indicated by the trailing character. The series represents spin-transfer torque MRAM technology designed for high endurance and low power consumption compared to traditional flash memory solutions.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for direct pin-compatible alternatives or functional equivalents within the same product family.