MR4A16BCMA35R

Memory IC Overview

The MR4A16BCMA35R is a magnetoresistive random access memory (MRAM) device manufactured by Everspin Technologies. It provides a storage capacity of 16 Mbit, organized as 1M x 16 bits with a 16-bit data bus width. The component features parallel interface and supports a read/write cycle time of 35 ns. It operates within a supply voltage range of 3 V to 3.6 V. The device is housed in a BGA-48 package and is designed for surface mount installation. It supports an industrial operating temperature range from -40 C to +85 C.

Memory IC Feature Summary

• Provides SRAM-compatible timing with fast 35 ns read/write cycles.
• Offers unlimited read and write endurance without degradation.
• Maintains data non-volatility for over 20 years at specified temperatures.
• Includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits.

Memory IC Applications

• Applications requiring permanent storage and rapid retrieval of critical data
• Fault-tolerant design systems utilizing ECC protection
• Industrial embedded solutions needing high endurance memory

Memory IC Procurement Notes

Verify the specific suffix 'R' indicates reel packaging when ordering. Confirm the industrial temperature grade (-40 C to +85 C) matches system requirements. Ensure the BGA-48 footprint aligns with PCB layout constraints. Check moisture sensitivity level compliance for assembly processes. Validate power supply stability within the 3 V to 3.6 V range to prevent low-voltage inhibit circuitry activation during writes.

Memory IC Selection Notes

Select this part for designs requiring non-volatile memory with SRAM-like speed and unlimited endurance. Compare against MR4A16BMA35R if commercial temperature range suffices. Consider MR4A08BCMA35R if 8-bit bus width meets interface needs. Evaluate power consumption specifications against system thermal limits. Ensure ECC handling logic is implemented in the host processor.

Memory IC Part Context

This component belongs to the MR4A16B series of parallel MRAM devices. It shares core architectural features with other variants in the family, differing primarily in packaging, temperature rating, and delivery format. The series is characterized by its magnetoresistive technology, offering durability superior to traditional flash or EEPROM technologies.

Memory IC Replacement Considerations

MR4A16BMA35R offers identical electrical specifications but may differ in temperature range or packaging quantity. Verify pinout compatibility before substitution. Cross-reference datasheets for any minor differences in timing parameters or power consumption profiles between the industrial and commercial grades.