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The MS1N6659 is a dual ultrafast power rectifier manufactured by Microchip Technology. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 15 A per diode. The device utilizes a TO-254AA (TO-254-3) through-hole package. Key electrical characteristics include a maximum reverse leakage current of 10 µA at 200 V, a forward voltage drop of 1 V at 10 A, and a typical reverse recovery time of 35 ns.
Verify the specific suffix requirements for your application, as MS1N6659 denotes a military-grade variant. Confirm that the TO-254AA package dimensions align with your PCB footprint. Ensure thermal management strategies account for the 15 A current rating under expected operating conditions. Check for RoHS compliance status if required by your manufacturing standards.
Select this component when high-speed rectification is critical for system efficiency. The 200 V rating suits medium-voltage applications. Consider the through-hole mounting requirement for mechanical stability. Evaluate the thermal performance within the TO-254AA package against your heat dissipation capabilities. Compare against standard recovery diodes if speed is not a primary constraint.
This part belongs to the 1N6659 series of dual ultrafast power rectifiers from Microchip Technology. It is designed for demanding power electronics applications requiring fast switching speeds. The series includes various package options and grade variations to meet different reliability and performance needs in industrial and commercial power systems.
Direct substitutes may include other dual ultrafast rectifiers with matching 200 V and 15 A ratings. Verify pinout compatibility and package dimensions before substitution. Cross-reference specifications for reverse recovery time and forward voltage to ensure equivalent performance.