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The MSAD120-12 is a glass passivated rectifier diode module manufactured by Microsemi Corporation. It features a common anode configuration with two diodes housed in the D1 package. The device supports a maximum repetitive reverse voltage of 1200 V and a maximum surge peak forward current of 2800 A at 10 ms. The average forward rectified current is rated at 120 A at a case temperature of 100°C. Key electrical parameters include a forward voltage of 1.43 V at 300 A and a maximum reverse leakage current of 6 mA at 1200 V.
Verify component authenticity against official Microsemi documentation due to end-of-life status. Confirm thermal interface requirements match the specified mounting torque of 2.5-4 Nm for M5 terminals. Ensure operating junction temperatures remain within the -40 to 150°C range during deployment.
Select this module for high-current rectification tasks requiring robust isolation. The D1 package facilitates efficient heat dissipation via the ceramic baseplate. Consider the 0.26 °C/W junction-to-case thermal resistance for thermal management design. Verify compatibility with system voltage ratings not exceeding 1200 V.
This component belongs to the MSKD120, MSAD120, and MSCD120 series of glass passivated rectifier diode modules. These devices are engineered for industrial power conversion environments. The series offers various voltage ratings from 800 V to 1800 V while maintaining a consistent 120 A current capacity across configurations.
Consult official Microsemi substitution guides for compatible alternatives. Verify pinout compatibility and thermal characteristics before integrating substitute components.