MSC2712GT1G

$0.20

Description：TRANS NPN 50V 0.1A SC-59
Series：-

SKU:c6d81923f347 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MSC2712GT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A SC-59. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MSC2712GT1G

Description：TRANS NPN 50V 0.1A SC-59
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 6V
Power - Max：200 mW
Frequency - Transition：50MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SC-59
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MSC2712GT1G

MSC2712GT1G

Single Bipolar Transistors Overview

The MSC2712GT1G is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-59-3 (SOT-563) surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 60 V. Key electrical characteristics include a minimum DC current gain (hFE) of 200, a transition frequency (fT) of 50 MHz, and a collector-emitter saturation voltage of 500 mV. Power dissipation is rated at 200 mW, with a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

High DC current gain for effective signal amplification
Wide operating temperature range up to +150°C
Compact SMD packaging for space-constrained designs

Single Bipolar Transistors Applications

General-purpose signal amplification circuits
Switching applications requiring low power consumption
Small-signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix GT1G to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation before integration. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications. Validate that the SC-59-3 footprint matches the target PCB layout requirements.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal NPN transistor with high gain and moderate voltage ratings is required. The SC-59-3 package offers a compact solution for dense circuit boards. Ensure the application current remains within the 100 mA limit and that thermal management accommodates the 200 mW power dissipation rating under expected operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the MSC2712GT1 series of general-purpose NPN transistors from onsemi. These devices are designed for low-power analog and digital switching applications. The series emphasizes reliability and consistent performance across varying temperature ranges, making them suitable for consumer electronics and industrial control systems where space is limited.