MSC3930-BT1

Overview

The MSC3930-BT1 is an NPN RF amplifier transistor manufactured by onsemi, designed for high-frequency applications. It features a maximum collector-emitter breakdown voltage of 20V and a transition frequency of 150MHz. The device supports a maximum power dissipation of 200mW at 25°C ambient temperature. It is housed in a surface-mount SC-70-3 (SOT-323) package, which is available in Pb-free configurations. This component serves as a preferred device within the manufacturer's portfolio for radio frequency signal amplification tasks.

Feature Summary

• NPN bipolar junction transistor architecture optimized for radio frequency amplification
• High-speed operation capability with a transition frequency reaching 150MHz
• Compact surface-mount packaging suitable for space-constrained circuit designs

Applications

• RF signal amplification in communication modules
• High-frequency circuit design requiring small form factors
• Radio frequency front-end stages in consumer electronics

Procurement Notes

Verify the specific ordering suffix to confirm package type and environmental compliance, such as Pb-free status. Confirm that the requested part matches the exact MSC3930-BT1 designation to ensure compatibility with intended RF circuit parameters. Check current product status, as availability may vary due to lifecycle changes. Ensure storage conditions align with semiconductor handling standards to maintain device integrity prior to assembly.

Selection Notes

Select this component when designing circuits requiring NPN topology for frequencies up to 150MHz. Consider the 20V collector-emitter voltage limit and 200mW power dissipation constraints during thermal management planning. The SC-70-3 package is appropriate for applications prioritizing minimal board space. Evaluate alternative devices if higher voltage ratings or different pin configurations are required for the specific system architecture.

Part Context

This component belongs to the family of bipolar RF transistors offered by onsemi. It is categorized under discrete semiconductors specifically for radio frequency applications. The device utilizes standard NPN technology adapted for high-frequency performance characteristics. It represents a specialized solution within the broader portfolio of general-purpose and power transistors provided by the manufacturer.

Replacement Considerations

Public documentation indicates the MSC3930-BT1 has an obsolete status. Engineers should identify equivalent NPN RF transistors with matching 150MHz transition frequency and 20V breakdown voltage from current production lines. Verify pinout compatibility with the SC-70-3 footprint before implementing any substitute components in existing designs.