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The MSCD165-12 is a glass passivated rectifier diode module manufactured by Microsemi Corporation. It features a maximum repetitive reverse voltage (VRRM) of 1200 V and a maximum average forward current (IFAV) of 165 A at a case temperature of 100°C. The device supports a non-repetitive surge current (IFSM) of 6000 A for 10 ms. Thermal resistance from junction to case is 0.18 °C/W per diode, with an isolation voltage of 3000 V rms. The module utilizes an aluminum oxide ceramic isolated metal baseplate and operates within a junction temperature range of -40°C to 150°C.
Verify component authenticity and datasheet revision status before integration. Confirm thermal interface material compatibility with the specified M6 mounting torque requirements. Check for end-of-life notifications or discontinuance alerts from the manufacturer. Ensure replacement components meet identical electrical ratings and mechanical dimensions for direct substitution in existing designs.
Select this module for applications requiring high current handling and robust isolation. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Consider the operating temperature range when designing heatsinking solutions. Verify that system voltage peaks do not exceed the 1200 V rating under all transient conditions.
This component belongs to the MSxD165 series of glass passivated rectifier diode modules. The series includes variants with different voltage ratings such as 800V, 1600V, and 1800V. These modules are designed for industrial power conversion applications requiring high reliability and efficient heat dissipation through their ceramic-isolated baseplates.
Consult official Microchip/Microsemi documentation for confirmed substitute part numbers. Verify that any alternative device matches the 165 A current rating, 1200 V blocking voltage, and D2 package outline dimensions. Ensure thermal characteristics and mounting specifications are compatible.