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The MSCD200-16 is a glass passivated three-phase rectifier diode module manufactured by Microsemi Corporation. It features a maximum repetitive reverse voltage (VRRM) of 1600 V and a surge peak repetitive reverse voltage (VRSM) of 1700 V. The module supports an average forward current (IFAV) of 200 A at a case temperature of 100°C, with a non-repetitive surge current (IFSM) capability of 6800 A for 10 ms. Forward voltage drop is 1.3 V at 300 A, and reverse leakage current is ≤9 mA. Thermal resistance from junction to case is 0.21 °C/W per diode, with an isolation voltage of 3000 V rms.
Verify the specific suffix code against official Microsemi documentation to confirm exact voltage rating and package configuration. Confirm thermal interface requirements match the M6 mounting torque specifications. Ensure compatibility with the D2 case outline dimensions for mechanical integration. Check for any RoHS compliance status updates in the latest datasheet revision.
Select this module for high-power three-phase applications requiring robust surge handling and high voltage isolation. Evaluate thermal management needs based on the 0.21 °C/W junction-to-case resistance. Consider the 3000 V isolation rating for safety-critical environments. Compare forward voltage characteristics against system efficiency targets at rated current loads.
This component belongs to the MSKD200, MSAD200, and MSCD200 family of glass passivated rectifier diode modules. These devices are designed for industrial power conversion systems. The series offers various voltage ratings to suit different input line voltages while maintaining a consistent 200 A current capacity and standardized D2 package form factor.
Direct substitutes within the same Microsemi family include MSCD200-08, MSCD200-12, and MSCD200-18, which share identical current and thermal ratings but differ in reverse voltage blocking capabilities. Verify that the alternative voltage rating meets or exceeds the circuit's peak inverse voltage requirements.