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The Microsemi MSCD60-12 is a glass passivated rectifier diode module designed for high-voltage applications. It features a maximum repetitive reverse voltage (VRRM) of 1200 V and a surge peak repetitive reverse voltage (VRSM) of 1300 V. The module supports an average forward current (IFAV) of 60 A at a case temperature of 100°C with single-phase half-wave 180° conduction. It withstands a non-repetitive surge current (IFSM) of 1150 A for 10 ms. The junction temperature range spans from -40°C to +150°C, with thermal resistance from junction to case (Rth(j-c)) rated at 0.59 °C/W per diode.
Verify the specific part number suffix against official Microsemi documentation to confirm exact electrical ratings and package variations. Confirm compliance requirements such as RoHS status and REACH regulations prior to procurement. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity.
Select this component based on its 1200 V blocking capability and 60 A continuous current rating. Evaluate the thermal management requirements using the specified Rth(j-c) value. Consider the operating junction temperature limits and the need for appropriate heatsinking to maintain performance within the defined thermal characteristics under expected load conditions.
The MSCD60-12 belongs to the MSxD60 series of glass passivated rectifier diode modules manufactured by Microsemi Corporation. This series encompasses various voltage ratings ranging from 800 V to 1800 V, including variants like MSCD60-08, MSCD60-16, and MSCD60-18. These modules share common structural features such as the D1 package outline and similar thermal design principles.
Publicly confirmed substitute part numbers are not available in the provided documentation.