MSCDC200KK170D1PAG

MSCDC200KK170D1PAG

$394.86
  • Description:DIODE MODULE SIC 1700V 200A D1P
  • Series:-

SKU:eeefbe99dc05 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE SIC 1700V 200A D1P
  • Series:-
  • Mfr:Microchip Technology
  • Package:Box
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 200 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:800 µA @ 1700 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:D1P
  • Grade:-
  • Qualification:-

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MSCDC200KK170D1PAG

Overview

The MSCDC200KK170D1PAG is a Silicon Carbide (SiC) Schottky diode module manufactured by Microchip Technology. It features a dual configuration with a reverse voltage rating of 1.7 kV and a forward current capacity of 200 A. The device exhibits a forward voltage of 1.5 V and operates within a temperature range from -40°C to +125°C. Designed for chassis mounting, this component utilizes SiC technology to ensure zero reverse recovery and zero forward recovery characteristics.

Feature Summary

  • Utilizes Silicon Carbide (SiC) Schottky technology for high-performance switching.
  • Features zero reverse recovery and zero forward recovery characteristics.
  • Provides a dual diode configuration in a robust chassis mount package.

Applications

  • High-frequency power conversion systems
  • Industrial motor drive inverters
  • Uninterruptible power supply (UPS) circuits

Procurement Notes

Verify the specific ordering suffix against the official Microchip datasheet to confirm pinout compatibility and thermal interface requirements. Ensure that the chassis mounting hardware matches the mechanical specifications provided in the package dimensions section of the product documentation before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high-voltage blocking capabilities combined with low switching losses. The SiC material choice supports operation at elevated temperatures and higher frequencies compared to traditional silicon devices. Evaluate the thermal management solution to maintain junction temperatures within the specified operational limits during peak load conditions.

Part Context

This module belongs to the MSCDC series of SiC Schottky diode modules from Microchip Technology. These components are engineered for demanding power electronics applications where efficiency and reliability are critical. The series offers various voltage and current ratings to accommodate different system architectures and performance requirements.

Replacement Considerations

Consult the official Microchip cross-reference guide or contact technical support for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' modules without validating electrical parameters and mechanical fit through direct datasheet comparison.

FAQ

What type of recovery characteristics does this SiC diode exhibit?

The MSCDC200KK170D1PAG features both zero reverse recovery and zero forward recovery characteristics due to its Silicon Carbide Schottky construction.

How is this module mechanically mounted?

The device is designed for chassis mounting, utilizing a specific package form factor detailed in the mechanical drawings of the datasheet.

MSCDC200KK170D1PAGMSCDC200KK170D1PAG
$394.86
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