MSD60N16

$0.20

Description：N Channel MOSFET,60V,TO-252
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:6fda96a2a2d3 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,60V,TO-252
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (D-Pak)
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63

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MSD60N16

Overview

The Bruckewell MSD60N16 is an N-channel enhancement mode MOSFET utilizing high-density trench technology. It features a drain-source voltage of 60 V and a gate-source voltage rating of ±20 V. The device guarantees a maximum static drain-source on-resistance of 50 mΩ at VGS = 10 V and ID = 8 A, with a typical value of 37 mΩ. Continuous drain current reaches 16 A at TC = 25°C and 10 A at TC = 100°C. Pulsed drain current capability is 64 A. Single pulse avalanche energy is rated at 11 mJ (L=0.1mH). Power dissipation is 27 W at TC = 25°C. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

High-performance trench structure providing low on-resistance and optimized gate charge for synchronous buck converter applications.
Guaranteed 100% single-pulse avalanche energy testing ensures robust reliability under inductive switching conditions.
Low reverse transfer capacitance combined with high switching speed minimizes switching losses during operation.

Applications

Motor drive circuits
Power tool systems
LED lighting drivers

Procurement Notes

Verify the component against the official Bruckewell Technology Corporation datasheet Rev. A-2020. Confirm the package type matches TO-252 specifications and check RoHS compliance status. Ensure the ordering number corresponds exactly to MSD60N16. Validate that electrical parameters align with the provided absolute maximum ratings and thermal characteristics before integration.

Selection Notes

Select this component for designs requiring a 60 V N-channel MOSFET with high current handling capabilities up to 16 A continuous. The low RDS(ON) makes it suitable for synchronous rectification in buck converters. Consider the thermal resistance values when designing heat dissipation strategies for the TO-252 package. Verify compatibility with gate drive voltages of 10 V or 4.5 V based on specific on-resistance requirements.

Part Context

This part belongs to the family of N-channel power MOSFETs manufactured by Bruckewell Technology Corporation. It utilizes advanced trench cell density to achieve superior performance metrics compared to standard planar devices. The device is designed for general-purpose power switching applications where efficiency and thermal management are critical factors in system design.