MSH80N087AU

Overview

The MSH80N087AU is an N-Channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a Drain-Source Voltage (VDS) of 80 V and a Gate-Source Voltage (VGS) of ±20 V. The device guarantees a maximum static Drain-Source On-Resistance (RDS(on)) of 8.7 mΩ at VGS =10V and 13 mΩ at VGS =4.5V. Continuous Drain Current (ID) reaches 60 A at TC=25°C and 38 A at TC=100°C, with a Pulsed Drain Current (IDM) of 170 A. Power Dissipation (PD) is rated at 52 W at TC=25°C. Operating Junction Temperature ranges from -55 to 175 °C.

Feature Summary

• Utilizes advanced trench DMOS technology to minimize on-resistance and enhance switching performance.
• Capable of withstanding high energy pulses in avalanche and commutation modes.
• Features super low gate charge and excellent dv/dt capability for efficient operation.
• Manufactured as a green device compliant with RoHS requirements.

Applications

• Networking equipment
• Load Switching circuits
• Synchronous Rectifiers
• Quick Chargers

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the PDFN 5X6 package dimensions align with your PCB footprint design. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions. Validate component authenticity through authorized distribution channels.

Selection Notes

Select this component for designs requiring robust avalanche energy handling and low conduction losses. Evaluate the thermal impedance characteristics relative to the expected ambient temperature and copper board area. Consider the gate charge specifications when designing drive circuits for optimal switching speed. Verify that the voltage and current ratings provide adequate margins for peak transient loads in the target application.

Part Context

This component belongs to the family of surface-mount N-Channel MOSFETs produced by Bruckewell Technology Corporation. It is specifically engineered using trench DMOS architecture to deliver superior performance in power conversion and switching environments. The device is packaged in a compact form factor suitable for automated surface mount assembly processes.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the guaranteed Single Pulse Avalanche Energy (EAS)?

The device guarantees a minimum Single Pulse Avalanche Energy of 11 mJ under test conditions of VDD=50V, L=0.1mH, and IAS=15A.

How does the RDS(on) vary with Gate-Source Voltage?

The maximum RDS(on) is specified as 8.7 mΩ at VGS=10V and increases to a maximum of 13 mΩ at VGS=4.5V, both measured at ID=10A.