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The MSKD120-08 is a glass passivated rectifier diode module from the Microsemi MSKD120 series. It features an aluminum oxide ceramic isolated metal baseplate for heat transfer. The device provides a maximum repetitive reverse voltage (VRRM) of 800 V and a maximum non-repetitive surge peak reverse voltage (VRSM) of 900 V. It supports a forward average current (IFAV) of 120 A at a case temperature of 100°C. The module withstands a non-repetitive forward surge current (IFSM) of 2800 A for 10 ms. Electrical characteristics include a maximum forward voltage of 1.43 V at 300 A and a maximum reverse leakage current of 6 mA. Thermal resistance from junction to case is 0.26 °C/W per diode.
Verify the specific part number suffix against official Microsemi documentation to confirm the exact voltage rating, as the MSKD120 family includes variants with ratings up to 1800 V. Ensure that the procurement specifications match the required thermal management capabilities, specifically the junction-to-case thermal resistance and mounting torque requirements for the M5 terminals. Confirm compliance with relevant environmental standards if applicable to the target application.
Select this component based on the required blocking voltage and current handling capacity for power conversion circuits. Consider the thermal resistance values when designing the heatsinking system to maintain the junction temperature within the specified operating range. Evaluate the physical dimensions and mounting hole patterns to ensure compatibility with the existing mechanical assembly and PCB layout constraints.
This component belongs to the MSKD120 series of glass passivated rectifier diode modules manufactured by Microsemi Corporation. The series encompasses multiple voltage ratings, including 800 V, 1200 V, 1600 V, and 1800 V options. These modules are designed for high-power applications requiring robust performance and reliable operation in demanding electrical environments.
Public confirmed substitute part numbers: None available.