MSRT15080AD

Overview

The GeneSiC Semiconductor MSRT15080AD is a silicon standard recovery diode module rated for a repetitive peak reverse voltage of 800 V. It provides an average forward current of 150 A per leg with a maximum instantaneous forward voltage of 0.40 V at Tj = 25 °C and IFM = 150 A. The device features a three tower package with an electrically isolated base plate, offering a thermal resistance from junction to case of 0.40 °C/W. It supports a peak forward surge current of 2250 A per leg and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• High surge capability
• Three tower package design
• Electrically isolated base plate

Applications

• Industrial power conversion systems
• Motor drive rectification circuits
• Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific voltage rating suffix against the required circuit blocking voltage. Confirm that the three tower mounting style matches the heatsink interface. Ensure the application environment remains within the specified operating temperature limits to maintain performance reliability.

Selection Notes

Select this component when high surge current handling is required alongside efficient thermal dissipation. The isolated base plate simplifies mounting on grounded heat sinks without additional insulators. Compare the 0.40 V forward voltage drop against system efficiency targets to ensure optimal conduction losses.

Part Context

This part belongs to the MSRT150XXD series of silicon standard recovery diodes. The series includes variants with different voltage ratings, such as 600 V and 1000 V options. All models share the same physical footprint and electrical characteristics except for the reverse voltage rating.

Replacement Considerations

Direct substitutes include other MSRT150XXD series modules with identical current ratings but matching voltage specifications. Verify pinout compatibility before replacing existing designs.