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Product Detailed Parameters
- Description：DIODE MOD GP 1000V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io) (per Diode)：200A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 600 V
- Operating Temperature - Junction：-40°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT200100A is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a Three Tower Iso package with screw mount installation. The device supports a repetitive peak reverse voltage of 1000 V and a continuous forward current of 200 A. Electrical characteristics include a maximum thermal resistance from junction to case of 1.2 °C/W and a reverse current of 10 mA at 150 °C. The operating temperature range extends from -40 °C to +175 °C, with a storage temperature range of -55 °C to +150 °C.
Feature Summary
- High surge capability for robust performance under transient conditions
- Three Tower Iso package design for efficient thermal management
- Standard silicon recovery technology for reliable rectification
Applications
- Industrial power conversion systems
- Motor drive applications
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific suffix designation against official documentation to confirm exact electrical ratings and package variations. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure mounting hardware specifications align with the Three Tower Iso package requirements for proper thermal interface and mechanical stability during operation.
Selection Notes
Select this component based on the required 1000 V blocking voltage and 200 A current handling capacity. Evaluate the thermal resistance value against the system's heat dissipation capabilities. Consider the wide operating temperature range for environments subject to significant thermal fluctuations. Verify compatibility with existing circuit topologies requiring standard recovery characteristics.
Part Context
This module belongs to the MSRT series of high-power diode modules designed for demanding industrial applications. The series offers various voltage ratings up to 1600 V while maintaining consistent current handling and package dimensions. It serves as a discrete solution for replacing integrated modules in specific power electronics designs where standard recovery characteristics are preferred over fast or ultra-fast alternatives.
Replacement Considerations
Consult official substitution lists for compatible parts within the MSRT family. Verify that alternative components match the 1000 V rating and 200 A current capacity. Ensure physical package compatibility with the Three Tower Iso form factor.
