MSRT200120AD

MSRT200120AD

$57.01
  • Description:DIODE MOD GP 1200V 200A 3TOWER
  • Series:-

SKU:8c2aef9f116c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1200V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT200120AD

Overview

The MSRT200120AD is a silicon standard recovery diode module from the MSRT200XXX series, manufactured by GeneSiC Semiconductor. It features an electrically isolated base plate and a three-tower package design. The device supports a repetitive peak reverse voltage (VRRM) of 1200 V and provides an average forward current (IF(AV)) of 200 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.1 V at 200 A and a thermal resistance (junction-to-case) of 0.35 °C/W. The module operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • High surge capability with a peak forward surge current of 3000 A per leg
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Three-tower package configuration designed for efficient thermal management

Applications

  • Industrial power conversion systems
  • Inverter circuits in motor drives
  • High-power DC-DC converter topologies

Procurement Notes

Verify the specific voltage rating variant required, as the MSRT200XXX series includes options for 1200 V, 1400 V, and 1600 V. Confirm whether the suffix 'A' or 'R' is necessary for your assembly process, as these denote specific package or reel configurations. Ensure that the thermal interface material used matches the specified junction-to-case thermal resistance of 0.35 °C/W for optimal performance.

Selection Notes

Select this component when high current handling and electrical isolation are critical requirements. The 200 A per leg rating makes it suitable for robust industrial applications. Consider the three-tower package for easier screw mounting compared to flat modules. Verify that the system's thermal design can maintain the junction temperature within the specified -55°C to +150°C operating range under all load conditions.

Part Context

This module belongs to the MSRT200XXX family of silicon standard recovery diodes. The series offers various voltage ratings from 1200 V to 1600 V while maintaining a consistent 200 A current capacity. The 'D' suffix typically indicates a standard diode configuration, whereas other suffixes may denote rectifier bridges or reel packaging options.

Replacement Considerations

Direct replacements must match the 200 A current rating, 1200 V blocking voltage, and three-tower isolated package dimensions. Verify that any substitute component maintains the same 0.35 °C/W thermal resistance and compatible terminal configuration for seamless integration into existing PCB or chassis designs.

MSRT200120ADMSRT200120AD
$57.01
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