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Product Detailed Parameters
- Description：DIODE MOD GP 1400V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1400 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1400 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT200140AD is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features an electrically isolated base plate and a three-tower package design. The device supports a repetitive peak reverse voltage of 1400 V and an average forward current of 200 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.1 V at rated conditions and a thermal resistance from junction to case of 0.35 °C/W. The module operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- High surge capability with a peak forward surge current rating of 3000 A per leg
- Electrically isolated base plate for enhanced safety and mounting flexibility
- Three-tower package configuration designed for robust mechanical stability
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the specific voltage variant, as the MSRT200 series includes 1200 V, 1400 V, and 1600 V options. Confirm whether the suffix 'A' indicates a specific binning or tolerance level relative to the standard 'D' version. Ensure the procurement documentation matches the exact part number to avoid confusion with non-isolated or different package variants within the same family.
Selection Notes
Select this component when high current handling and electrical isolation are required in a compact form factor. The low thermal resistance facilitates efficient heat dissipation in high-power applications. Consider the 3000 A surge rating for circuits subject to significant inrush currents. Verify that the operating temperature range meets the environmental requirements of the target system.
Part Context
This module belongs to the MSRT200XXX series of silicon standard recovery diodes. The series offers various voltage ratings from 1200 V to 1600 V, all sharing the same 200 A current rating and three-tower isolated package. The 'AD' suffix denotes the specific 1400 V voltage rating within this standardized product line.
Replacement Considerations
Direct substitutes within the same manufacturer's lineup include the MSRT200120AD and MSRT200160AD, which share identical current and thermal specifications but differ in reverse voltage ratings.
