ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE MOD GP 1600V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1600 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
Download product information
Overview
The MSRT200160AD is a silicon standard recovery diode module from the MSRT200XXXAD series, rated for repetitive peak reverse voltages of 1200 V to 1600 V. It provides an average forward current of 200 A per leg with a maximum instantaneous forward voltage of 1.1 V at Tj = 25 °C and IFM = 200 A. The device features a three tower package with an electrically isolated base plate, offering a maximum thermal resistance (junction-to-case) of 0.35 °C/W. It supports a peak forward surge current of 3000 A per leg under half-sine conditions and operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Three tower package configuration providing robust mechanical structure
- Electrically isolated base plate ensuring safety and flexibility in mounting
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the specific voltage rating suffix against the required circuit blocking voltage. Confirm that the three tower package dimensions match the heatsink interface. Ensure the application environment stays within the specified thermal limits to maintain reliability. Check for any specific handling requirements due to the isolated base plate design during assembly.
Selection Notes
Select this component when high surge current tolerance and electrical isolation are required in a compact form factor. The low thermal resistance facilitates efficient heat dissipation in high-power density designs. Consider the 1.1 V forward voltage drop for efficiency calculations at rated current. Verify compatibility with existing PCB or chassis mounting hardware for the three tower style.
Part Context
This part belongs to the MSRT200XXXAD family of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as 1200 V and 1400 V options. These modules are engineered for general-purpose rectification in medium to high-power electronic systems requiring reliable performance under stress.
Replacement Considerations
Direct substitutes include other MSRT200XXXAD series parts with matching current ratings but different voltage capabilities, provided the system voltage allows. Cross-brand replacements must be verified for identical pinout, thermal resistance, and isolation characteristics.
