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Product Detailed Parameters
- Description：DIODE GEN PURP 800V 200A 3 TOWER
- Series：*
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：-
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：-
- Current - Average Rectified (Io) (per Diode)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Operating Temperature - Junction：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MSRT20080D is a silicon standard recovery diode rated for an 800 V repetitive peak reverse voltage. It supports a continuous forward current of 200 A and withstands surge currents up to 566 A. The device features a three-tower package with a thermal resistance from junction to case of 0.18 °C/W. Operating temperatures range from -40 °C to +175 °C, with a maximum storage temperature of 300 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Three tower package configuration for efficient mounting
Applications
- Industrial power supplies
- Motor drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific suffix designation against official documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with existing thermal management solutions given the high current ratings. Confirm that the component meets all necessary regulatory standards for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component when high voltage blocking and substantial continuous current handling are required in a compact form factor. The low thermal resistance facilitates effective heat dissipation in high-power density designs. Consider the operating temperature range and surge capabilities to ensure reliability under transient load conditions typical in industrial environments.
Part Context
This diode belongs to the MSRT200 series from GeneSiC Semiconductor, which includes variants rated at 600 V and 1000 V. All models in this series share the same physical package and thermal characteristics, differing primarily in their voltage blocking capabilities. This family is engineered for robust performance in high-power conversion applications.
Replacement Considerations
Direct substitutes include the MSRT20060(A) and MSRT200100(A). These alternatives offer identical mechanical and thermal profiles but differ in voltage ratings. Verify that the alternative voltage rating aligns with the circuit requirements to prevent overvoltage stress or insufficient blocking capability.
