MSRT250100A

MSRT250100A

$37.30
  • Description:DIODE MOD GP 1000V 250A 3TOWER
  • Series:-

SKU:4e4a25f2c70a Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1000V 250A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1000 V
  • Current - Average Rectified (Io) (per Diode):250A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 250 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:15 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT250100A

Overview

The MSRT250100A is a standard recovery diode array manufactured by GeneSiC Semiconductor. It features a common cathode configuration with two individual diodes housed in a single module. The device supports a maximum DC reverse voltage of 1000 V and an average rectified current of 250 A. It utilizes silicon technology and is designed for chassis mounting in a three-tower package structure. The component operates within a specified temperature range suitable for industrial power applications.

Feature Summary

  • Common cathode dual diode configuration for efficient circuit integration
  • High current handling capability with 250 A average rectified rating
  • Robust voltage blocking performance up to 1000 V reverse bias
  • Chassis mount design facilitating secure installation in power systems

Applications

  • Industrial power supply units requiring high current rectification
  • Inverter circuits in motor drive systems
  • DC-DC converter modules for energy distribution
  • Uninterruptible power supply (UPS) input stages

Procurement Notes

Verify the specific suffix designation against official GeneSiC Semiconductor documentation to ensure exact electrical characteristics match project requirements. Confirm mechanical dimensions and mounting hole patterns align with thermal management solutions. Request updated datasheets to validate compliance with current RoHS directives and material declarations before finalizing procurement orders.

Selection Notes

Select this component when designing circuits necessitating high-voltage isolation and substantial continuous current flow. Evaluate thermal dissipation requirements based on the 250 A rating and forward voltage drop characteristics. Ensure the chassis mounting style integrates effectively with existing heat sink infrastructure. Compare leakage current specifications at maximum operating temperatures to guarantee reliability under stress conditions.

Part Context

This part belongs to the MSRT series of discrete semiconductor products from GeneSiC Semiconductor, now associated with Navitas Semiconductor. The series focuses on high-power diode modules utilizing standard silicon technology. These components are engineered for robust performance in demanding power electronics environments, offering reliable rectification capabilities for heavy-duty industrial applications.

Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and thermal resistance values when evaluating alternative manufacturers. Ensure replacement parts maintain identical voltage and current ratings to prevent system failure.

MSRT250100AMSRT250100A
$37.30
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