MSRTA20080AD

MSRTA20080AD

$60.28
  • Description:DIODE MODULE GP 800V 200A 3TOWER
  • Series:-

SKU:b12fb7117262 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MODULE GP 800V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 800 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRTA20080AD

Overview

The MSRTA20080AD is a silicon standard recovery diode module from the MSRTA series, manufactured by GeneSiC Semiconductor. It features an average forward current rating of 200 A per leg and offers repetitive peak reverse voltage options of 600 V or 1000 V. The device utilizes a heavy three tower package with an electrically isolated base plate. Key electrical characteristics include a maximum thermal resistance of 0.35 °C/W at Tj = 25 °C and a peak forward surge current capability of 3000 A for an 8.3 ms half-sine pulse.

Feature Summary

  • Heavy three tower package design providing high surge current capability
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Standard silicon recovery technology optimized for robust power applications

Applications

  • Industrial motor drives and variable frequency drives
  • Uninterruptible power supply (UPS) systems
  • High-power DC-DC converters and rectifier bridges

Procurement Notes

Verify the specific voltage variant required, as the datasheet indicates availability in both 600 V and 1000 V configurations under the same base part number structure. Confirm the suffix designation matches the desired blocking voltage specification before ordering. Ensure compatibility with screw-mount installation requirements due to the heavy three tower package style. Cross-reference terminal configurations to match existing PCB or busbar layouts.

Selection Notes

Select this component for applications requiring high average current handling and robust surge protection within a thermally efficient package. The 200 A per leg rating supports substantial load currents, while the low thermal resistance facilitates effective heat dissipation. Consider the operating temperature range of -55 °C to 150 °C for extreme environment suitability. Evaluate the need for electrical isolation between the module base and the heatsink when designing the thermal interface.

Part Context

This module belongs to the MSRTA family of silicon standard recovery diodes, which spans ratings from 600 V to 1000 V and currents up to 100 A or higher depending on the specific suffix. The series is characterized by its heavy three tower construction, designed to withstand significant mechanical and electrical stress. It serves as a discrete power solution for replacing older generation modules in industrial power conversion equipment.

Replacement Considerations

Direct substitutes within the same series include MSRTA20060AD and MSRTA200100AD, provided the voltage and current ratings align with the application requirements. Verify that alternative parts maintain the same three tower package dimensions and terminal pinout to ensure mechanical compatibility without redesigning the mounting hardware.

MSRTA20080ADMSRTA20080AD
$60.28
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