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Product Detailed Parameters
- Description：DIODE MOD GP 1000V 500A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io) (per Diode)：500A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 500 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRTA500100A is a silicon carbide diode array manufactured by GeneSiC Semiconductor. It features one pair of common cathode standard diodes rated for 1000 V DC reverse voltage and 500 A average rectified current per diode. The forward voltage is specified as 1.2 V at 500 A, with a maximum reverse leakage current of 25 µA at 600 V. Operating junction temperature ranges from -55°C to 150°C. The device utilizes a base mount installation type within a three-stud package configuration.
Feature Summary
- High-power silicon carbide construction for efficient energy conversion
- Common cathode dual-diode array architecture
- Robust thermal management via base mount design
Applications
- Industrial power supplies
- Motor drive systems
- Uninterruptible power systems
Procurement Notes
Verify the specific suffix designation against official GeneSiC documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the procurement channel provides traceable component history consistent with industrial semiconductor standards. Cross-reference the part number with the manufacturer's latest datasheet to validate compatibility with intended circuit parameters before finalizing acquisition.
Selection Notes
Select this component for applications requiring high current handling and elevated voltage blocking capabilities in harsh environments. The silicon carbide material offers superior thermal conductivity compared to traditional silicon devices. Evaluate the thermal resistance characteristics relative to the heatsink interface requirements. Confirm that the system design accommodates the physical dimensions and mounting constraints associated with the three-stud package format.
Part Context
This component belongs to the MSRTA series of high-power diode arrays produced by GeneSiC Semiconductor. The series leverages silicon carbide technology to deliver enhanced performance in demanding power electronics applications. GeneSiC specializes in advanced semiconductor solutions for industrial and defense sectors, focusing on efficiency and reliability in high-voltage scenarios.
Replacement Considerations
Consult official cross-reference lists for compatible alternatives. Verify that any substitute matches the 1000 V rating, 500 A current capacity, and three-stud package form factor. Ensure thermal and electrical characteristics align with the original design specifications.
