MSRTA600140A

MSRTA600140A

$77.35
  • Description:DIODE MOD GP 1400V 600A 3TOWER
  • Series:-

SKU:fe9012d187d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1400V 600A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1400 V
  • Current - Average Rectified (Io) (per Diode):600A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 600 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:3-SMD Module
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRTA600140A

Overview

The MSRTA600140A is a silicon carbide diode array manufactured by GeneSiC Semiconductor. It features one pair of common cathode standard diodes rated for 1400 V DC reverse voltage and 600 A DC average rectified current per diode. The device utilizes a three-tower package designed for chassis mounting. Forward voltage is specified at 1.2 V when conducting 600 A. Reverse leakage current is limited to 25 µA at 600 V. The junction operating temperature range extends from -55°C to 150°C, supporting high-power industrial applications.

Feature Summary

  • High-voltage capability with 1400 V reverse voltage rating
  • High-current handling with 600 A DC average rectified current
  • Robust thermal management via three-tower chassis mount package
  • Wide junction temperature operation up to 150°C

Applications

  • Industrial motor drives
  • Power conversion systems
  • High-voltage rectification circuits

Procurement Notes

Verify the specific suffix designation against official GeneSiC documentation to confirm exact electrical tolerances and pinout configurations. Ensure that the procurement channel provides traceable component history consistent with manufacturer standards. Confirm that the received units match the requested part number variant to avoid integration issues in high-power designs.

Selection Notes

Select this component for applications requiring high voltage blocking and substantial current capacity in a compact form factor. The three-tower design facilitates efficient heat dissipation through direct chassis contact. Evaluate thermal interface requirements to maintain junction temperatures within the specified operational limits during continuous high-load conditions.

Part Context

This module belongs to the MSRTA series of silicon carbide diode arrays from GeneSiC Semiconductor. The series is engineered for demanding power electronics environments where efficiency and thermal performance are critical. The three-tower architecture distinguishes these modules by providing dedicated thermal paths for improved reliability compared to standard planar packages.

Replacement Considerations

The MSRTA500140A serves as a verified substitute within the same product family, offering identical packaging and configuration but with a reduced current rating of 500 A. Verify that the lower current capacity meets the specific load requirements of the target application before implementation.

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