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Product Detailed Parameters
- Description:POWER MOD THYRISTOR/DIODE T1
- Series:-
- Mfr:Microsemi Corporation
- Package:Bulk
- Structure:Series Connection - All SCRs
- Number of SCRs, Diodes:2 SCRs
- Voltage - Off State:1.6 kV
- Current - On State (It (AV)) (Max):110 A
- Current - On State (It (RMS)) (Max):-
- Current - Non Rep. Surge 50, 60Hz (Itsm):2250A @ 50Hz
- Operating Temperature:-40°C ~ 130°C (TJ)
- Mounting Type:Screw Mount
- Package / Case:Module
- Voltage - Gate Trigger (Vgt) (Max):3 V
- Current - Gate Trigger (Igt) (Max):150 mA
- Current - Hold (Ih) (Max):250 mA
- Grade:-
- Qualification:-
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Overview
The MSTC110-16 is a Thyristor/Diode module from the MSTC110 series, rated for a maximum repetitive reverse voltage (VRRM) of 1600V and a non-repetitive peak surge voltage (VRSM) of 1700V. It supports an average on-state current (ITAV) of 110A at 85°C case temperature. The device features a T1 package with screw mounting and operates within a junction temperature range of -40°C to 130°C. Key electrical parameters include a gate trigger current (IGT) of 150mA, a holding current (IH) of 250mA maximum, and an isolation voltage of 3000Vrms.
Feature Summary
- Utilizes glass passivated chip technology for enhanced reliability
- Features heat transfer through aluminum oxide DCB ceramic isolated metal baseplate
- Designed with high surge capability for demanding power applications
- Constructed in an international standard package for simple mounting
Applications
- Power Converters
- Lighting Control
- DC Motor Control and Drives
- Heat and temperature control
Procurement Notes
Verify the specific part number suffix against official manufacturer documentation to confirm exact voltage ratings and pin configurations. Ensure thermal interface materials are compatible with the specified mounting torque values for the M5 and M6 terminals. Confirm compliance with relevant environmental standards required for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component based on the 1600V blocking voltage requirement and 110A continuous current capacity. Evaluate the thermal resistance characteristics relative to the heatsink design to ensure junction temperatures remain within the 130°C limit under expected load conditions. Consider the di/dt and dv/dt ratings when designing the gate drive circuitry to prevent false triggering or device failure during rapid transient events.
Part Context
This module belongs to the MSTC110 series of thyristor/diode modules manufactured by Microsemi Corporation. The series includes variants with different voltage ratings, such as the MSTC110-08 (800V) and MSTC110-12 (1200V). These modules are designed for industrial power electronics applications requiring robust performance and reliable switching capabilities in compact form factors.
Replacement Considerations
Direct substitutes may include other MSTC110 series variants with matching current ratings but different voltage specifications, provided the system voltage requirements align. Cross-brand replacements require careful verification of pinout compatibility, thermal resistance values, and mechanical dimensions to ensure seamless integration without redesigning the mounting structure.
FAQ
What is the maximum non-repetitive forward surge current for the MSTC110-16?
The maximum non-repetitive forward surge current is 2250A at a junction temperature of 45°C for a 10ms sine wave duration.
How is the thermal management achieved in this module?
Thermal management is achieved through heat transfer via an aluminum oxide DCB ceramic isolated metal baseplate, with a junction-to-case thermal resistance of 0.28°C/W per thyristor.
What is the recommended mounting torque for the terminal screws?
The recommended mounting torque for the M5 terminals is 3±15% Nm, while the M6 heatsink screws require 5±15% Nm.
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